渐变光扩展结构减小885nm高功率激光二极管发散角  

High power 885 nm laser diodes with graded optical expand structures for small divergence angle

作　　者：王俊[1] 白一鸣[2] 刘媛媛[1] 贺卫利[1] 熊聪[1] 王翠鸾[1] 冯小明[1] 仲莉[1] 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083 [2]华北电力大学可再生能源学院,北京102206

出　　处：《红外与激光工程》2011年第12期2382-2387,共6页Infrared and Laser Engineering

基　　金：中国科学院知识创新工程青年人才领域前沿项目资助课题(ISCAS2008T12);国家自然科学基金(61006050);北京市自然科学基金(2102042)

摘　　要：为了减少激光二极管泵浦激光晶体过程中产生的热量,并提高与泵浦材料的光学耦合效率,理论设计并实验制备了低发散角的885 nm高功率激光二极管列阵。通过在限制层中引入渐变光扩展结构,结合对整体外延材料结构的优化设计,有效减小了激光器件的远场垂直发散角。采用AlGaInAs/AlGaAs量子阱适当增加材料的压应变,提高外延材料光增益系数,并对量子阱的组分和厚度进行了优化。采用低压金属有机化学汽相沉积(LP-MOCVD)技术制备了外延材料,并制作成1 cm单条激光列阵。测试结果表明:器件远场垂直发散角减小到17.6°,输出光功率为20.1W,斜率效率为1.05W/A,相应中心波长为888.2 nm。In order to decrease the generated heat during pumping laser crystals,and enhance the efficiency of optical coupling with pumped materials,885 nm high power laser diodes with small vertical divergence angle were theoretically designed and fabricated.By means of introducing a grade optical expand layer into cladding layers,and combining optimized design the epitaxy material structure,the vertical divergence angle of devices was effectively decreased.AlGaInAs/AlGaAs quantum wells structure was used to increase the compressive strain,optical gain coeffcient was enhanced,and material composition and thickness of quantum wells were optimized theoretically.The epitaxy material was prepared by LP-MOCVD technology,and the standard 1 cm laser bar was fabricated.Measured results indicate that the vertical divergence angle of devices is decreased to 17.6°,the output power and slope efficiency are 20.1 W and 1.05 W/A respectively,and the corresponding center wavelength is 888.2 nm.

关 键 词：渐变光扩展结构 高功率激光二极管 885nm 远场发散角 

分 类 号：TN24[电子电信—物理电子学]