一种基于MMIC技术的S波段GaAs单刀单掷开关  

Design of S-band SPST switch base on MMIC technology

作　　者：刘聪[1] 周翼鸿[1] 李天明[1] 

机构地区：[1]电子科技大学物理电子学院国家863计划强辐射实验室,四川成都610054

出　　处：《现代电子技术》2012年第2期139-141,共3页Modern Electronics Technique

摘　　要：射频开关作为一个系统的重要组成部分其性能直接影响整个系统的指标和功能。其中插入损耗和隔离度以及开关速度是射频开关最重要的几个指标。在实际测试中,S波段脉冲信号源需要产生快前沿的窄脉冲信号。在此基于上述需求,利用了射频开关模块设计的基本原理,并结合了PCB上微带线的特性阻抗分析,且设计了合适的开关驱动电路,最终设计出一种高隔离度,低插入损耗,高速射频开关,开关控制电压为(0,-5V)。在频率2～4GHz的条件下,插入损耗小于1.7dB,隔离度大于48dB,结果满足设计要求。RF switch as an important component of a system directly affects the performance indexes and functions of overall system. Among them, the insertion loss, isolation and switching speed are the most important indexes of a RF switch. In the actual test, S-band pulse signal source needs to generate the narrow pulse signal of fast leading edge. Based on the above requirements, the appropriate switch driver circuit was design in combination with the PCB microstrip line characteristic impedance analysis. Finally, a high isolation, low insertion loss, high-speed RF switch was designed according to the basic principles of RF switch module design. The control voltage of the switch is 0 V and --5 V. Under the conditions of 2;4 GHz frequency, its insertion loss is less than 1.7 dB, isolation is greater than 48 ;iB. The results meet the design requirements.

关 键 词：单刀单掷 射频开关 特性阻抗 S波段 

分 类 号：TN919-34[电子电信—通信与信息系统]