大功率二极管PSPICE模型构建  

Model Construction of PSPICE for High Power Diode

作　　者：田敏[1] 杨玉东[2] 高安邦[1] 

机构地区：[1]淮安信息职业技术学院 [2]淮阴工学院电气与电子工程学院,江苏淮安223003

出　　处：《哈尔滨理工大学学报》2011年第6期58-62,共5页Journal of Harbin University of Science and Technology

基　　金：国家高技术研究计划(863计划)(2007AA06Z111);江苏省科技型企业创新基金(BC2010140)

摘　　要：针对采用PSpice仿真感性负载电路中出现的错误振荡问题,依据半导体内部工作机理,通过求解二极管基区双极扩散方程,构建了一种大功率PIN二极管的PSPICE子电路仿真模型,在模型过程考虑了二极管的正向导通和反向恢复特性.模型通过测试电路仿真得到反向电压和电流波形,并与实验数据进行比较.仿真结果表明,作为大功率器件模型使用,该模型能够准确反映PIN二极管的开关特性,提高电路仿真精确度.To improve the error oscillation which happened in inductive load using pspice soft to simulate the circuit,according to the semiconductor internal principle,through solving diode based ambipolar diffusion equations,a high-power PIN diode model for PSPICE sub-circuit was put forward.In the model,the diode forward conduction and reverse recovery characteristics were taken into account.The simulation waves of reverse voltage and current was obtained through the test circuit,and compared with the experimental data.Simulation result shows： as the use of high-power device model,the model can accurately reflect the characteristics of PIN diode switch and improve circuit simulation accuracy.

关 键 词：二极管 PSPICE模型 仿真 

分 类 号：TN312[电子电信—物理电子学]