适用于近紫外LED芯片的白光荧光粉Y_2(MoO_4)_3∶Dy^(3+)的发光特性  

Luminescent Properties of White Phosphor Y_2(MoO_4)_3∶Dy^(3+) for NUV LED Chips

作　　者：龚慧[1] 林林[1] 丘志海[1] 黄兴勇[1] 郑志强[1] 

机构地区：[1]福建师范大学物理与光电信息科技学院,福州350007

出　　处：《人工晶体学报》2011年第6期1467-1470,1488,共5页Journal of Synthetic Crystals

基　　金：福建省科技重大专项(2007HJ0004-2)资助项目;福建省教育厅资助项目(JK2011008);福建省青年人才创新项目(2007F3027)

摘　　要：采用高温固相法制备纯相Y2(MoO4)3∶Dy3+荧光粉,并对其晶场及发光性质进行研究。晶场分析结果表明:Y3+格位晶场结构近似为对称性很低的C2,因此样品在近紫外区有很强f-f激发峰,适合于近紫外LED芯片。在387 nm激发下,主要发射峰为Dy3+的特征发射487 nm(蓝光,4F9/2→6H15/2)和574 nm(黄光,4F9/2→6H13/2)。增大Dy3+掺杂浓度,黄光与蓝光的强度比值(Y/B)随之增大。387 nm激发下,不同Dy3+掺杂浓度荧光粉发射光的色坐标均在白光区域中。以上结果表明Y2(MoO4)3∶Dy3+是一种新型的适于近紫外LED芯片激发的白光荧光粉,发光性能良好。In this paper, the pure-phase phosphors Y2（MoO4）3：Dy^3＋ were prepared by solid-state reaction method. The crystal field and luminescent properties of the phosphors were investigated. The results indicated that the symmetry of the y^3 ＋ sites is approximated to the low-symmetry C2, The samples have strong f-f excitation peaks in the near ultraviolet（NUV） range, which match well with NUV LEDchips. Under a 387 nm lightsource excitation, the phosphors show a high efficient blue and yellow band emissions, which originate from the ^4F9/2→^6H15/2 and^4F9/2→^6H13/2 transitions of Dy^3＋ , respectively. In addition, the yellow-to-blue intensity ratio （Y/B） increases with increasing of Dy^3＋ concentration.Finally, chromaticity coordinates of the emission spectra of the samples wi were calculated, which are all in the white region of the CIE diagrams. th different Dy^3＋ All of our above results indicate that Y2（MoO4）3：Dy^3＋ is a new white phosphor for near-UV LED chips luminescent property. concentration experimental with superior

关 键 词：Y2(MoO4)3∶Dy3+ 荧光粉 白光LED 发光性质 

分 类 号：O433[机械工程—光学工程]