Eu^(3+),Tb^(3+)掺杂对RF磁控溅射ZnO薄膜结构的影响  

Influence of Eu^(3+),Tb^(3+) Co-doping on ZnO Films by RF Magnetron Sputtering

作　　者：郭冠军[1] 罗莉[1] 戴强钦[1] 黄方映[1] 姚丽丽[1] 董国帅[1] 

机构地区：[1]广东工业大学物理与光电工程学院,广州510006

出　　处：《人工晶体学报》2011年第6期1494-1499,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(A040410;10774031)资助项目

摘　　要：利用RF磁控溅射技术,不同条件下在不同衬底上制备了纯ZnO及Eu3+,Tb3+共掺ZnO薄膜。研究了薄膜的衬底、沉积时间和衬底温度对ZnO薄膜结构及形貌的影响。使用X射线衍射仪(XRD)对样品的结构进行了表征,结果表明:玻璃和石英衬底上的薄膜分别在300℃、镀膜0.5 h和常温下、镀膜1 h时薄膜具有良好的c轴择优取向,单晶质量较好;而硅衬底上的薄膜在300℃、镀膜1 h时具有良好的(103)轴择优取向,单晶质量略有降低。Pure and Eu^3＋,Tb^3＋ co-doped ZnO thin films were deposited by radio frequency （RF） magnetron sputtering technique on different substrates and under different conditions. The effects of substrate, substrate temperature, deposition time on structure and morphology of ZnO thin films wereinvestigated by X-ray diffractomer （XRD）. The results indicated that the films prepared on glass and quartz substrate have a preferred orientation along the c-axis at 300 ℃, 0.5 h sputtering and at ambient temperatures, 1 h sputtering respectively, whereas the films prepared on silicon substrate have a preferred orientation along the （ 103 ） -axis at 300 ℃ and an our sputtering.

关 键 词：磁控溅射 ZNO薄膜 溅射时间 衬底温度 

分 类 号：O484[理学—固体物理]