退火温度对ITO薄膜微结构和光电特性的影响  

Effect of Annealing Temperature on the Microstructure and Photoelectrical Properties of ITO Films

作　　者：江锡顺[1] 万东升[1] 宋学萍[2] 孙兆奇[2] 

机构地区：[1]滁州学院电子信息工程系,滁州239000 [2]安徽大学物理与材料科学学院,合肥230039

出　　处：《人工晶体学报》2011年第6期1536-1540,1556,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50872001);教育部博士点专项基金(20060357003);安徽省自然科学研究项目(KJ2010B148)

摘　　要：用直流磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜。制备出的薄膜在大气环境下退火,退火温度分别为100℃、200℃、300℃和400℃,保温时间为1 h。采用X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)、紫外-可见光分光光度计和四探针测试仪等测试手段分别对薄膜的微结构、化学组分和光电特性进行了测试分析。分析结果表明:Sn元素已经溶入In2O3晶格中形成了固溶体。退火温度的升高,有助于提高ITO薄膜中Sn原子氧化程度,从而提高了薄膜在可见光范围内的透射率。退火温度为200℃时ITO薄膜的性能指数最高,为4.56×10-3Ω-1。Indium-tin-oxide （ITO） films were prepared by direct current （DC） magnetron sputtering. After deposition, the films were annealed in air for 1.0 h at different temperatures （ 100-400℃ ）. The microstructure, chemical composition and photoelectric properties of the films were analyzed by X-rayDiffraction （XRD）, Transmission Electron Microscopy （TEM）, X-ray Photoelectron Spectroscopy （XPS）, Ultraviolet-Visible Spectrophotometer and four-point probe instrument. Microstructure analysis showed that the films still keep the bixbyite crystal structure as In2O3. No existence of Sn or Sn oxidediffraction peaks suggests that Sn has been introduced into In2O3 lattice, forming polycrystalline ITO. The photoelectrical property analysis shows that after annealing the ITO films represent excellent transparent and conductive performance ： figure of merit increases to 4.56×10^-3Ω^-1.

关 键 词：ITO薄膜 磁控溅射 光电特性 

分 类 号：O484[理学—固体物理]