微波烧结制备高电位梯度ZnO压敏电阻的研究  

Study on Preparation of High Potential Gradient Zinc Oxide Varistor by Microwave Sintering

作　　者：张代兵[1,2,3] 甘国友[1,2,3] 严继康[1,2,3] 杜景红[1,2,3] 

机构地区：[1]昆明理工大学材料科学与工程学院,云南昆明650093 [2]稀贵及有色金属先进材料教育部重点实验室,云南昆明650093 [3]云南省新材料制备与加工重点实验室,云南昆明650093

出　　处：《热加工工艺》2011年第24期107-109,共3页Hot Working Technology

基　　金：云南省自然科学基金(2008ZC014M);昆明理工大学分析测试基金(2009-013;2009-016;2009-030和2009-031)

摘　　要：利用微波烧结技术制备高电位梯度ZnO压敏电阻。将ZnO和PbO、B2O3、Co2O3、MnO2粉体按照化学计量比混合,将所得的粉体经干燥、650℃预烧、700～900℃烧结、成型;对比了不同温度下常规烧结和微波烧结对ZnO压敏电阻电性能的影响,同时研究了烧结温度对ZnO压敏电阻电性能的影响;并采用SEM和XRD对烧结试样结构进行表征。结果表明,微波烧结所制备样品内部的晶粒生长均匀,平均粒径为200～500 nm,试样压敏电压为800～1000 V/mm,试样漏电流为80～120μA。The high voltage gradient ZnO varistors were prepared by microwave sintering. The powders of PbO, B203, Co203, MnO2 and ZnO were mixed by required stoichiometric. The powders prepared after drying, 650 ℃ pre-sintering, 700 ℃ -900 ℃ sintering, molding. Compared with the effect of conventional sintering temperature and microwave sintering on the properties of ZnO varistors electrical, the effects of sintering temperature on the electrical properties of ZnO varistor were studied. The microstructure of the sintered samples were characterized by SEM and XRD. The results show that the grain of the samples prepared by microwave sintering is uniform, the average diameter of the grain is 200 nm-500 nm, the sample varistor voltage is 800V/mm~ 1000V/mm, the sample leakage current is 80 uA- 120 uA.

关 键 词：ZNO压敏电阻 微波烧结 高电位梯度 电性能 

分 类 号：TB32[一般工业技术—材料科学与工程]