不同填充率时三组元声子晶体缺陷态  

Defect States in Three-Component Phononic Crystal by Different Filling Fraction

作　　者：易秀英[1] 李雪勇[2] 周昕[2] 

机构地区：[1]湖南科技职业学院机电系,湖南长沙410118 [2]湖南工业大学理学院,湖南株洲412007

出　　处：《湖南工业大学学报》2011年第6期25-28,共4页Journal of Hunan University of Technology

基　　金：湖南科技职业学院青年科研基金资助项目(KJ09011);湖南省教育厅科研基金资助项目(09C321);湖南省教育厅基金资助项目(11C0425)

摘　　要：运用基于平面波的超元胞方法,研究作为缺陷引入第三组元材料(四氯化碳)对二维二组元声子晶体(水/水银)带结构的影响。结果表明:当缺陷柱填充率发生变化时,原带隙的位置、宽度变化不大;缺陷带频率主要受第三组元材料物性参数的影响;当正常插入体填充率发生变化时,原带隙的位置、宽度都发生了改变,同时也影响缺陷带的出现,且这些缺陷态都是局域化的。因此,在具有宽带隙的二组元体系中引入适当的第三组元线缺陷,让缺陷带频率落在二组元体系的带隙中,就可以形成特殊的波导态。声子晶体的这一特性对于声波/弹性波的传播和新的声学应用具有重要意义。By means of the supercell＇plane wave method, investigated the effect of the third component material as the introduced defect on the band structure of two-dimension two-component phononic crystal （PC）. It shows that： when the filling fraction of defect rods changes, defect bands can appear in the primary band gap whose position and width had a minor change; the frequency of the defect states/bands are mainly affected by the third material＇ s physical parameters; When the filling fraction of normal rods changes, defect bands appear in the primary band gap whose position and width had also a major change, and all the defect states are localization. Therefore, adding proper third material as linear defects to the two- component system with wider band gap where defect bands will fall into, some special filter guided states will be formed. This characteristic has a very important significance for acoustic/elastic wave propagating and new acoustic applications.

关 键 词：声子晶体 三组元 线缺陷 

分 类 号：O426.5[理学—声学]