基于平面工艺硅探测器的β伏打微核能电池  

A Study on the Beta Voltaic Micro-nuclear Battery Based on the Planar Technology Silicon Detector

作　　者：张凯[1] 何高魁[1] 黄小健[1] 刘洋[1] 孟欣[1] 郝晓勇[1] 

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《核电子学与探测技术》2011年第11期1218-1222,共5页Nuclear Electronics & Detection Technology

摘　　要：简要叙述了利用平面工艺硅探测器和放射性同位素构成的β伏打微核能电池的原理,比较了不同灵敏面积硅探测器对β伏打微核能电池开路电压的影响。实验证明,单个β伏打微核能电池的开路电压可达到0.15 V～0.3 V,采用串、并联方式可以获得较大的输出功率。It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope.Different sensitive area of silicon detectors are used to cooperate with 63Ni source to buildup of beta voltaic micro-nuclear batteries.The experimental data show that the larger sensitive area the silicon detector has,the higher open circuit voltage it produces,and the open circuit voltage of single cell has reached an excellent result from 0.15V to 0.30V.It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries.

关 键 词：β伏打微核能电池 平面工艺 硅探测器 

分 类 号：TL814[核科学技术—核技术及应用]