LaNiO_3导电氧化物薄膜的制备及应用研究  

Fabrication and Application of Conductive LaNiO_3 Oxide Thin Films

作　　者：彭焕英[1] 殷明志[1] 蒋迪波[1] 

机构地区：[1]西北工业大学理学院,西安710129

出　　处：《材料导报》2012年第1期28-34,共7页Materials Reports

基　　金：航天支撑基金(2009613305);西北工业大学种子基金(Z2011016)

摘　　要：综述了退火温度、气氛和衬底对LNO薄膜结构和电性能的影响,详细介绍了LNO薄膜作底电极或过渡层在钙钛矿结构的PLT、PZT、BST铁电和BFO铁磁电薄膜生长过程中对其铁电性能和疲劳性能的影响。Several typical preparing conditions such as annealed temperatures, annealing atmosphere, and substrate effect on the microstructure and electronic properties were introduced emphatically. The LNO films as bottom electrode or transition layers of PLT, PZT, BST ferroelectric and BFO ferroelectromagnetic on the electronic and fatigue were introduced particularly.

关 键 词：LANIO3 制备 应用 

分 类 号：O484.1[理学—固体物理]