电子在镍纳米晶中的直接隧穿及其在MOS结构中的存储(英文)  

Direct Tunneling and Storage of Electrons in Ni Nanocrys-tals Embedded within MOS Structure

作　　者：倪鹤南[1,2] 吴良才[3] 宋志棠[3] 惠唇[1] 

机构地区：[1]上海交通大学,上海200030 [2]绍兴文理学院,浙江绍兴312000 [3]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《稀有金属材料与工程》2012年第1期1-4,共4页Rare Metal Materials and Engineering

基　　金：Nature Science Foundation of Zhejiang Province of China (Y4090148);National Nature Science Foundation of China (60776058)

摘　　要：研究了镍纳米晶镶嵌在 MOS(金属—氧化物—半导体)电容结构中应用于非挥发性存储器的可行性。制备了镶嵌在氧化层中的镍纳米晶。采用电子束蒸发方法,再经过快速退火工艺,得到平均尺寸 7 nm,密度 1.5×1012/cm2的镍纳米晶。电容随频率变化曲线发现明显的峰,测试分析了电容-电压和电导-电压特性。结果表明电子通过直接隧穿停留在镍纳米晶中,并且存储在 MOS 结构中。Recently, nanocrystal nonvolatile memory （NVM） devices using nanocrystals （NCs） have attracted great research interest. In this work, we investigated the feasibility of Ni nanocrystals embedded in metal–oxide–semiconductor （MOS） capacitor structure for NVM application. Ni NCs embedded in the gate oxide was fabricated. Ni nanocrystals with an average size of 7 nm and density of 1.5×1012 cm-2 were synthesized by e-beam evaporation technique followed by rapid thermal annealing. Distinct frequency-dependent capacitance peaks were observed. High-frequency capacitance versus voltage （C-V） and conductance versus voltage （G-V） measurements were also characterized. These results demonstrate that electrons can be loaded onto Ni nanocrystals by direct tunneling and can be stored in the fabricated MOS structure.

关 键 词：纳米晶存储器 镍纳米晶 MOS 结构 电荷存储特性 

分 类 号：TB383.1[一般工业技术—材料科学与工程]