萘掺杂对MgB_2超导线材微结构和超导电性的影响(英文)  

Effects of C_(10)H_8 Doping on Microstructure and Supercon-ductivity of MgB_2 Wires

作　　者：孙昱艳[1] 张平祥[1,2,3] 熊晓梅[2] 刘国庆[2] 闫果 

机构地区：[1]东北大学,辽宁沈阳110004 [2]西北有色金属研究院,陕西西安710016 [3]西部超导材料科技有限公司,陕西西安710018

出　　处：《稀有金属材料与工程》2012年第1期5-8,共4页Rare Metal Materials and Engineering

基　　金：“863” Project (2007AA03Z237);the National Key Basic Research Program (No. 2011CBA00104) of China

摘　　要：采用原位粉末装管技术(in-situ PIT)制备了萘(C10H8)掺杂 MgB2/Nb/Cu 线材。前驱粉末按照 MgB2+xwt% (x=0,2,5,8)的比例将 Mg 粉、B 粉和 C10H8粉末混合研磨,装入 Cu/Nb 复合管中,分别拉拔加工至Φ2.0 mm 和Φ1.0 mm,然后 Ar 气氛中分别在 650,700,750 ℃热处理,保温 2.5 h。通过 X 射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等测试手段分析了样品的相结构和微观结构等。结果发现,样品超导转变温度 Tc不随萘掺杂量的变化而变化,但正常态电阻有所降低。在 20 和 25 K 无外磁场时,x=8 样品的临界电流密度分别达到 1.1×105和 3.8×104 A/cm2,而 x=5 样品也达到 3.1×104 和 1.2×104 A/cm2。C10H8-doped MgB2 wires were fabricated by in-situ PIT（Powder in Tube） method.The Nb/Cu tube was filled with the uniformly mixed precursor powders of magnesium,boron and C10H8 with the stoichiometry of MgB2＋xwt%C10H8,where x=0,2,5,8 and drawn to diameter Φ2 mm and Φ1 mm,respectively,and then heat treated in argon atmosphere at three different temperatures（650,700,750 ℃） for 2.5 h.The phase formation and microstructures of the samples were analyzed by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,and so on.It is found that the critical transition temperature（Tc） changes little with increasing of C10H8 doping content,while normal resistance decreases to some degree.At 20,25 K and in zero external field,the critical current density（Jc） the sample of x=8 achieves 1.1×105 and 3.8×104 A/cm2,respectively,and the Jc of the sample of x=5 reaches 3.1×104 and 1.2×104 A/cm2,respectively.

关 键 词：萘掺杂 MgB2线材 微观结构 超导电性 

分 类 号：TM26[一般工业技术—材料科学与工程]