H_2S硫化CuInSe_2生成CuIn(S_xSe_(1-x))_2薄膜的XRD及Raman分析  

XRD and Raman Analysis of CuIn(S_xSe_(1-x))_2 Thin Films Prepared by H_2S Vulcanizing CuInSe_2

作　　者：张鑫狄[1] 江国顺[1] 

机构地区：[1]中国科学技术大学材料科学与工程系、中国科学院材料与能量转换重点实验室,合肥市230026

出　　处：《光谱实验室》2012年第1期9-15,共7页Chinese Journal of Spectroscopy Laboratory

基　　金：安徽高校省级自然科学研究项目(KJ2010A332)

摘　　要：将CuInSe_2薄膜在H_2S与Ar的混合气体中硫化是制备CuIn(S_xSe_(1-x))_2薄膜的一种常用方法。硫化所用到的CuInSe_2薄膜是用溶剂热法生成的CuInSe_2纳米颗粒旋涂而成。不同于其他真空条件下制备CuInSe_2薄膜的方法.溶剂热法的优点是其相对简单的制备工艺和较低廉的成本。对硫化过程进行研究后发现,硫化温度和时间直接影响CuIn(S_xSe_(1-x))_2薄膜的质量,诸如薄膜成分、结晶度、均匀性和带隙宽度都可以通过改变这些实验条件来进行控制。CuIn（S_xSe_（1-x））_2 can be prepared by the reaction of CuInSe_2 with gas mixture of H_2S and Ar.CuInSe_2 films were prepared by coating CuInSe_2 nanoparticles which were synthesized by solvothermal method.The solvothermal method was different from vacuum-based methods,and that was used due to its relatively simple procedures and low cost.The effects of temperature and time of the sulphurization on CuIn（S_xSe_（1-x））_2 film were studied.It was found that the compositions,degree of crystallinity,homogeneity and band gap of the CuIn（S_xSe_（1-x））_2 thin films were completely controlled by altering the experimental conditions.

关 键 词：铜铟硒硫 溶剂热法 部分硫化 一步硫化法 

分 类 号：O434.13[机械工程—光学工程] O657.37[理学—光学]