脉冲激光外延生长YBa_2Cu_3O_(7–δ)涂层导体LaMnO_3缓冲层  被引量:1

Epitaxial growth of LaMnO_3 buffer layers for YBa_2Cu_3O_(7-δ) coated conductors using pulsed laser deposition

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作  者:刘宗洁[1] 鲁玉明[1] 范峰[1] 刘志勇[1] 蔡传兵[1] 

机构地区:[1]上海大学物理系,上海200444

出  处:《电子元件与材料》2012年第2期26-29,共4页Electronic Components And Materials

基  金:国家自然科学基金资助项目(No.10774098;No.50702033);上海市科委项目资助(No.08521101502;No.10dz1203500);上海市重点学科项目资助(No.S30105)

摘  要:采用脉冲激光沉积技术在双轴织构的Ni95W5(Ni-5W)合金基底上外延生长了LaMnO3(LMO)薄膜作为涂层导体缓冲层,研究了沉积温度对LMO薄膜生长织构和表面形貌的影响。研究结果表明:沉积温度对LMO薄膜的表面形貌有一定的影响;在沉积温度为650℃时,LMO薄膜具有良好的(00l)取向,薄膜表面平整均匀,光滑致密,其均方根粗糙度在2 nm以下;而且,在此LMO缓冲层上外延生长的YBa2Cu3O7–δ超导层具有良好的双轴织构,超导转变温度Tc为92 K,转变宽度小于1 K,临界电流密度Jc为5.3×105A/cm2(77 K,自场)。LaMnO3 (LMO) thin films, as a single buffer layer of coated conductors, were epitaxially grown on the biaxially textured Ni95W5 (Ni-5W) alloy substrates by pulsed laser deposition (PLD). The effects of deposition temperature on the growth texture and surface morphology of the LMO films were investigated. The results show that: the deposition temperature has some effect on the surface morphology of the LMO films. At a deposition temperature of 650℃, the prepared LMO film possesses perfect (00/) orientation and shows a flat, smooth, dense and uniform surface with the root mean square (RMS) roughness below 2 nm; Moreover, the YBa2Cu3O7-δ superconducting layer epitaxially grown on this LMO film exhibits a good biaxial texture, a superconducting transition temperature (To) of 92 K with the transition width below 1 K, and a critical current density (Jr) of 5.3×10^5 A/cm2 at 77 K in self-fields.

关 键 词:缓冲层 涂层导体 双轴织构 RABITS LAMNO3 

分 类 号:TQ174[化学工程—陶瓷工业]

 

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