负载有立方相p-型半导体Cu_(1.8)S颗粒的TiO_2纳米带制备与表征  

Synthesis and Characterization of Cubic P-type Semiconductor Cu_(1.8)S-deposited TiO_2 Nanobelts

作　　者：李丽[1] 雷静果[2] 嵇天浩[1] 张希鹏[1] 

机构地区：[1]北京工商大学理学院,北京100048 [2]洛阳理工学院材料工程系,洛阳471023

出　　处：《无机材料学报》2012年第1期38-44,共7页Journal of Inorganic Materials

基　　金：国家重点基础研究发展计划(973计划)(2006CB932605)~~

摘　　要：采用Cu2O自牺牲模板法,以负载有立方相p-型半导体Cu2O颗粒的TiO2纳米带作为前驱物,在水热条件下与硫脲进行反应,制得了负载有立方相p-型半导体Cu1.8S颗粒的TiO2纳米带.测试结果表明,反应温度、反应时间和硫脲浓度对Cu1.8S纯度和形貌皆有影响.若反应在较低温度(如120℃)进行,即使反应时间达到25 h,产物中除了生成Cu1.8S还存在未反应Cu2O;若水热温度控制在160℃反应25 h,当硫脲浓度为0.25 mol/L时,负载物基本上是Cu1.8S且分散较好,当硫脲浓度升到0.5 mol/L时,负载物团聚严重.对罗丹明B的光催化降解活性测试结果表明,与纯TiO2纳米带相比,在负载有Cu2O或Cu1.8S后光催化活性显著降低.TiO2 nanobelts deposited with cubic p-type semiconductor Cu1.8S particles were prepared using Cu2O-deposited TiO2 nanobelts and thiourea as precursors under hydrothermal condition by Cu2O sacrificial template process.The measurement results show that the reaction temperature,reaction time and thiourea concentration have strong influence on the purity and morphology of Cu1.8S particles.A mixture phases of Cu1.8S and Cu2O on TiO2 nanobelts were obtained at 120℃ for 25 h within 0.5 mol/L of thiourea concentration.While reaction temperature was raised to 160℃,the Cu1.8S particles with high purity exhibited obvious aggregation,whereas the Cu1.8S particles with high purity and well dispersion were prepared under 0.25 mol/L of thiourea concentration.The photocatalytic activities in degradation of Rhodamine B solution demonstrate that the Cu1.8S or Cu2O-loading catalysts show lower photodegradation activities as compared with that of pure TiO2 nanobelts.

关 键 词：复合材料 立方相Cu1.8S TIO2纳米带 光催化 p-n异质结 

分 类 号：TB381[一般工业技术—材料科学与工程]