低能离子注入对仙客来幼苗生长发育的影响  

TEffect of Low Energy Ion Implantation on Cyclamen Seedling Growth

作　　者：孙鸿举[1] 刘倩 张娜[1] 

机构地区：[1]内蒙古大学生命科学学院,内蒙古呼和浩特010031

出　　处：《内蒙古农业科技》2011年第6期26-29,共4页Inner Mongolia Agricultural Science and Technology

基　　金：内蒙古自然科学基金项目资助(20080404MS0311)

摘　　要：以仙客来种子为材料,研究了不同剂量的N+注入对仙客来种子发芽势、发芽率、成苗率的影响。结果表明:随着N+注入剂量的增加发芽势和发芽率的变化趋势为先降低后升高再降低,表现为"马鞍型"曲线,成苗率在低剂量时与发芽率相接近,在高剂量时成苗率明显降低。Effec s of different N＋ implantation doses on the germination vigor,germination rate and survival seedling rate of Cyclamen Persicum Mill.The results showed that the germinationvigor and rate of Persicum Mill seeds showed the trend of declining rising declining with the increasing of N＋ implantation does,which displayed a peculiar＂saddle＂shape.The survival seedling rate was close to germination rate at low dose,but obviously decreased at high dose.

关 键 词：仙客来 离子束 影响 

分 类 号：S682.262[农业科学—观赏园艺]