Al-AlN太阳能选择性吸收涂层的中频溅射工艺研究  

STUDY OF MEDIUM-FREQUENCY SPUTTERING OF GRADED Al-AlN SOLAR SELECTIVE ABSORBERS

作　　者：付志强[1] 王成彪[1] 岳文[1] 彭志坚[1] 郭文利[2] 梁彤翔[2] 

机构地区：[1]中国地质大学(北京)工程技术学院,北京100083 [2]清华大学核能与新能源技术研究院精细陶瓷北京市重点实验室,北京100084

出　　处：《太阳能学报》2011年第12期1753-1757,共5页Acta Energiae Solaris Sinica

基　　金：教育部科学技术研究重点项目(108026);广西科学研究与技术开发计划项目(桂科攻0991009-9);中央高校基本科研业务费专项资金(2010ZY36);清华大学实验室开放基金(LF20114493)

摘　　要：探讨了AlN膜和渐变Al-AlN选择性吸收涂层的中频溅射技术,结果表明:增大铝靶电流或减小氩气流量有助于改善AlN反应溅射的工艺稳定性;随着氮气流量的增加,AlN膜的N/Al原子比增大,减小氩气流量或增大铝靶电流对制备满足理想化学计量比的AlN膜有利;AlN膜的致密性随氮气流量和铝靶电流的增大而改善,但氩气流量对AlN致密性没有明显影响;制备的渐变Al-AlN选择性吸收涂层可见光反射率低于6%。光谱选择性较好。The medium frequency sputtering process of AIN films and graded Al-AIN solar selective absorbers was studied. It is shown that the process stability of AIN reactive magnetron sputtering can be improved by increasing Al target current or decreasing argon flow rate ; the atomic ratio of N/AI is increased with the rise of nitrogen flow rate, and the synthesis of the films with the ideal stoichiometric ratio of AIN becomes easier with decreasing argon flow rate or increasing AI target current; the density of AIN films can be improved with the rise of nitrogen flow rate or Al target current, while the influence of argon flow rate on the density of AIN films is unobvious ; the Al-AIN solar selective absorbers with a graded Al-N distribution and a oxygen-rich AIN antireflection layer shows a visible light reflectivity of below 6% and a good spectral selectivity.

关 键 词：Al-AlN 选择性吸收涂层 中频反应溅射 工艺参数 

分 类 号：TB43[一般工业技术]