氮分压对多弧离子镀TiN涂层相结构及性能影响的研究  

Study on the Resistivity of Phase Structures and Properties of TiN Coating of Ion Plating with Multiple Arc Sources by N_2 Partial Pressure

作　　者：李晓青 

机构地区：[1]北京量具刃具厂

出　　处：《真空》1990年第3期1-5,共5页Vacuum

摘　　要：本文利用多弧离子镀设备沉积了 ＴｉＮ薄膜，对不同工艺条件下沉积ＴｉＮ的薄膜用 Ｘ射线衍射方法进行了研究，给出了薄膜相结构随氮分压变化的实验结果，测定了薄膜 的显微硬度．用ＳＥＭ方法观察了 ＴｉＮ涂层的组织形貌。指出：氮分压为多弧离子镀 的一个重要工艺参数，我们适当地控制氮分压，可以制作出性能良好的ＴｉＮ薄膜。In this paper, it is taken as the example that TiN thin film were deposited by ion plating equipment with multiple are sorces, the TiN thin films that were deposited in diferent technological conditions were investigated by XRD method. The experiment results that the phase structures of thin films change with N_2 partial pressure are given. The microhardness of thin film is measured. The structure and topography of thin film are observed by SEM method. Here it is also pointed out that N_2 partial pressure is one of important technological parameters of ion plating with multiple arc sources. If we control N_2 partial pressure properly, the TiN film can be deposited and have good performance,

关 键 词：氮分压 多弧离子镀 涂层 相结构 

分 类 号：TN304.055[电子电信—物理电子学]