组合法制备Pb(Zr_xTi(1-x))O_3组分梯度薄膜  

Convenient Preparation of Composition Gradient Pb(Zr_xTi(1-x))O_3 Thin Film by a Combinatorial Synthesis Process

作　　者：彭超[1] 何岗[1] 何明中[1] 洪建和[1] 栗海峰[1] 公衍生[1] 

机构地区：[1]中国地质大学(武汉)材料与化学学院,武汉430074

出　　处：《武汉理工大学学报》2012年第1期7-11,共5页Journal of Wuhan University of Technology

基　　金：国家自然科学基金(50972135);材料复合新技术国家重点实验室(武汉理工大学)开放基金(2010-KF-6)

摘　　要：在无蒸馏和无惰性气氛保护的条件下,快速制备了用于组合合成Pb(ZrxTi1-x)O3薄膜的前驱溶液PT和PZ。采用组合法在Pt/Ti/SiO2/Si衬底上制备了一系列Pb(ZrxTi1-x)O3组分梯度薄膜。经XRD分析表明,薄膜具有钙钛矿结构,择优取向为(111)。SEM结果显示薄膜厚度在500nm左右。电滞回线的测试表明,下梯度薄膜PZT-654表现出良好的铁电性能,明显优于其它薄膜。PZT-654梯度薄膜的剩余极化强度Pr为38.4μC/cm2,矫顽场Ec为75.0kV/cm,有较大的极化偏移,Poffset为12.9μC/cm2,表现出梯度铁电薄膜的特性。The PT and PZ precursor solutions,which could be used for combinatorial synthesis of Pb（ZrxTi1-x）O3 thin film,were prepared by a simple process without distillation and inert gas shielding in a few minutes.A series of composition gradient Pb（ZrxTi1-x）O3 thin films were prepared on Pt/Ti/SiO2/Si substrate by a combinatorial synthesis.XRD analysis showed that the composition gradient Pb（ZrxTi1-x）O3 thin films possessed perovskite structure with（111）-preferred orientation.SEM showed that the thickness of the thin film was around 500 nm.The hysteresis loops showed that the down-graded thin film PZT-654 possessed favorable ferroelectric property,which was better than other thin films.The remnant polarization（Pr） was 38.4 μC/cm2,the coercive field（Ec） was about 75.0 kV/cm and the polarization offset was 12.9 μC/cm2,which exhibited the characteristic of gradient ferroelectric thin film.

关 键 词：组合合成 Pb(ZrxTi1-x)O3 组分梯度薄膜 铁电性 

分 类 号：TM221[一般工业技术—材料科学与工程] TB43[电气工程—电工理论与新技术]