磁控溅射SiN_x薄膜的表面动态演化行为  

Surface Dynamic Evolution of SiN_x Thin Film Deposited by Magnetion Sputtering

作　　者：陈晖[1] 周细应[1] 

机构地区：[1]上海工程技术大学材料工程学院,上海201620

出　　处：《表面技术》2012年第1期23-26,共4页Surface Technology

基　　金：上海市重点学科建设项目资助(J51402)

摘　　要：采用射频磁控溅射法在石英玻璃和不锈钢基底上沉积SiNx薄膜,以SEM和AFM观察薄膜的表面形貌,检测粗糙度和颗粒度大小对薄膜表面形貌动态演化进行量化表征。结果表明:石英玻璃基片SiNx薄膜较不锈钢基片薄膜更为均匀致密,且颗粒更为细小;真空退火处理有利于细化SiNx薄膜颗粒,减小其表面粗糙度;在溅射功率为125～175W范围内,SiNx薄膜颗粒平均直径高达41.0nm,其rms以及颗粒度在75W时受氩气溅射压强的影响大。SiNx thin films were grown on quartz glass substrates and stainless steel by magnetron sputtering. Sur- face morphology of the films was investigated by scanning electron microscopy（SEM） and atomic force microscope （AFM）, then the film surface dynamic evolution was analyzed by detecting size of roughness and grain. The results showed that SiN. thin films in quartz glass substrates were more uniformly and small particles than in the stainless steel substrates; Vacuum annealing helped the SiNx film particles refined, and reduced the surface roughness. During the range of sputtering power of 125 W-175 W, the average particle diameter of SiNx thin films up to 41.0 nm; Its rms and particle size impacted severely by Ar pressure when the sputtering power was 75 W.

关 键 词：SiNx薄膜 粗糙度 颗粒度 原子力显微镜 

分 类 号：TG174.444[金属学及工艺—金属表面处理]