Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer  

作　　者：LI Yi LIU Qi WANG XiZhang SEKITANI Tsuyoshi SOMEYA Takao HU Zheng 

机构地区：[1]Key Laboratory of Mesoscopic Chemistry of MOE,School of Chemistry and Chemical Engineering,Nanjing University,Nanjing 210093,China [2]Department of Applied Physics,Tokyo University,7-3-1 Hongo,Bunkyo-ku,Tokyo 113-8656,Japan

出　　处：《Science China(Technological Sciences)》2012年第2期417-420,共4页中国科学（技术科学英文版）

基　　金：financially supported by the National Basic Research Program of China (973 Program) (Grant No. 2007CB936302);the National Natural Science Foundation of China (Grant No. 20833002)

摘　　要：We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon di- oxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer. The threshold voltage decreased remarkably from ca. -20 V to a few volts （below -7.6 V） while the mobility in- creased 1.5-3 times after the insertion of the interlayer of only ca. 2 nm, which could be attributed to the reduction of the car- tier injection barrier. The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.

关 键 词：low threshold voltage and high mobility pentacene-based organic thin film transistors metal phthalocyanines INTERLAYER 

分 类 号：TN321.5[电子电信—物理电子学] O641.4[理学—物理化学]