Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects  

作　　者：Toufik Bentrcia Faycal Djeffal Abdel Hamid Benhaya 

机构地区：[1]Department of Physics University of Batna,Batna 05000,Algeria [2]LEA Department of Electronics,University of Batna,Batna 05000,Algeria

出　　处：《Journal of Semiconductors》2012年第1期41-46,共6页半导体学报（英文版）

摘　　要：We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.

关 键 词：GS DG MOSFET hot-carriers degradation effects compact modeling piece-wise models 

分 类 号：TN386.1[电子电信—物理电子学] TP311.5[自动化与计算机技术—计算机软件与理论]