A 3 to 5 GHz low-phase-noise fractional-N frequency synthesizer with adaptive frequency calibration for GSM/PCS/DCS/WCDMA transceivers  

作　　者：Pan Yaohua Mei Niansong Chen Hu Huang Yumei Hong zhiliang 潘姚华;梅年松;陈虎;黄煜梅;洪志良(State Key Laboratory of ASIC&Systems Fudan University,Shanghai 201203,China)

机构地区：[1]State Key Laboratory of ASIC&Systems Fudan University,Shanghai 201203,China

出　　处：《Journal of Semiconductors》2012年第1期80-85,共6页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(No.2009AA011605)

摘　　要：A low-phase-noise E-A fractional-N frequency synthesizer for GSM/PCS/DCS/WCDMA transceivers is presented. The voltage controlled oscillator is designed with a modified digital controlled capacitor array to extend the tuning range and minimize phase noise. A high-resolution adaptive frequency calibration technique is introduced to automatically choose frequency bands and increase phase-noise immunity. A prototype is implemented in 0.13 #m CMOS technology. The experimental results show that the designed 1.2 V wideband frequency synthesizer is locked from 3.05 to 5.17 GHz within 30 μs, which covers all five required frequency bands. The measured in-band phase noise are -89, -95.5 and -101 dBc/Hz for 3.8 GHz, 2 GHz and 948 MHz carriers, respectively, and accordingly the out-of-band phase noise are -121, -123 and -132 dBc/Hz at 1 MHz offset, which meet the phase-noise-mask requirements of the above-mentioned standards.A low-phase-noise E-A fractional-N frequency synthesizer for GSM/PCS/DCS/WCDMA transceivers is presented. The voltage controlled oscillator is designed with a modified digital controlled capacitor array to extend the tuning range and minimize phase noise. A high-resolution adaptive frequency calibration technique is introduced to automatically choose frequency bands and increase phase-noise immunity. A prototype is implemented in 0.13 #m CMOS technology. The experimental results show that the designed 1.2 V wideband frequency synthesizer is locked from 3.05 to 5.17 GHz within 30 μs, which covers all five required frequency bands. The measured in-band phase noise are -89, -95.5 and -101 dBc/Hz for 3.8 GHz, 2 GHz and 948 MHz carriers, respectively, and accordingly the out-of-band phase noise are -121, -123 and -132 dBc/Hz at 1 MHz offset, which meet the phase-noise-mask requirements of the above-mentioned standards.

关 键 词：phase-locked loop loop stability analysis voltage controlled oscillation phase noise 

分 类 号：TN74[电子电信—电路与系统] TN859