Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition  

作　　者：Zhang Hai-Long Liu Feng-Zhen Zhu Mei-Fang Liu Jin-Long 张海龙;刘丰珍;朱美芳;刘金龙(Graduate University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Graduate University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2012年第1期314-319,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.G2006CB202601 and 2011CBA00705);the National Natural Science Foundation of China(Grant No.60806020);the Knowledge Innovation Project of Chinese Academy of Sciences(Grant No.KGCX2-YW-383-1)

摘　　要：The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are investigated. The plasma ignition condition is modified by varying the ratio of Sill4 to H2 （RH）. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Ha to Sill＊ （Iuα//SiH＊） at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH＊ values are realized. By optimizing the RN modulation, a uniform crystallinity along the growth direction and a denser αc-Si：H film can be obtained. However, an excessively high IRα/ISIH＊ may damage the interface properties, which is indicated by capacitance-voltage （C-V） measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are investigated. The plasma ignition condition is modified by varying the ratio of Sill4 to H2 （RH）. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Ha to Sill＊ （Iuα//SiH＊） at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH＊ values are realized. By optimizing the RN modulation, a uniform crystallinity along the growth direction and a denser αc-Si：H film can be obtained. However, an excessively high IRα/ISIH＊ may damage the interface properties, which is indicated by capacitance-voltage （C-V） measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.

关 键 词：plasma enhanced chemical vapour deposition microcrystalline silicon ignition condition 

分 类 号：TN304.055[电子电信—物理电子学]