New insight into the parasitic bipolar amplification effect in single event transient production  

作　　者：Chen Jian-Jun Chen Shu-Ming Liang Bin Deng Ke-Feng 陈建军;陈书明;梁斌;邓科峰(School of Computer Science,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]School of Computer Science,National University of Defense Technology,Changsha 410073,China

出　　处：《Chinese Physics B》2012年第1期334-339,共6页中国物理B（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004);the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025)

摘　　要：In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect （bipolar effect） in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the suhstrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P＋-well layer and can be removed by a buried SO2 layer.In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect （bipolar effect） in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the suhstrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P＋-well layer and can be removed by a buried SO2 layer.

关 键 词：parasitic bipolar amplification effect （bipolar effect） single event transient substrateprocess 

分 类 号：TN386.1[电子电信—物理电子学]