Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques  

作　　者：Zhang Yue-Fei Wang Li R.Heiderhoff A.K.Geinzer Wei Bin Ji Yuan Han Xiao-Dong L.J.Balk Zhang Ze 张跃飞;王丽;R.Heiderhoff;A.K.Geinzer;卫斌;吉元;韩晓东;L.J.Balk;张泽(Institute of Microstructure and Property of Advanced Materials,Beijing University of Technology,Beijing 100124,China;Department of Electronics,Faculty of Electrical,Information and Media Engineering,University of Wuppertal,Wuppertal D-42119,Germany;Department of Materials Science,Zhejiang University,Hangzhou 300038,China)

机构地区：[1]Institute of Microstructure and Property of Advanced Materials,Beijing University of Technology,Beijing 100124,China [2]Department of Electronics,Faculty of Electrical,Information and Media Engineering,University of Wuppertal,Wuppertal D-42119,Germany [3]Department of Materials Science,Zhejiang University,Hangzhou 300038,China

出　　处：《Chinese Physics B》2012年第1期374-379,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2009CB623702);the National Natural Science Foundation of China(Grant No.10904001);the Key Project Funding Scheme of Beijing Municipal Education Committee,China(Grant No.KZ201010005002)

摘　　要：The local thermal conductivity of polycrystalline aluminum nitride （A1N） ceramics is measured and imaged by using a scanning thermal microscope （SThM） and complementary scanning electron microscope （SEM） based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.The local thermal conductivity of polycrystalline aluminum nitride （A1N） ceramics is measured and imaged by using a scanning thermal microscope （SThM） and complementary scanning electron microscope （SEM） based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.

关 键 词：thermal conductivity A1N ceramics scanning thermal microscopy scanning electronmicroscopy 

分 类 号：TQ174.1[化学工程—陶瓷工业]