Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes  

作　　者：Cao Zhi-Fang Lin Zhao-Jun LŰYuan-Jie Luan Chong-Biao Yu Ying-Xia Chen Hong Wang Zhan-Guo 曹芝芳;林兆军;吕元杰;栾崇彪;于英霞;陈弘;王占国(School of Physics,Shandong University,Jinan 250100,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]School of Physics,Shandong University,Jinan 250100,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Chinese Physics B》2012年第1期414-418,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.10774090);the National Basic Research Program of China(Grant No.2007CB936602)

摘　　要：Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.

关 键 词：AlGaN/AlN/GaN heterostructures Schottky barrier diodes power consumption seriesresistance 

分 类 号：TN311.7[电子电信—物理电子学]