A study of GaN MOSFETs with atomic-layer-deposited Al_2O_3 as the gate dielectric  

作　　者：Feng Qian Xing Tao Wang Qiang Feng Qing Li Qian Bi Zhi-Wei Zhang Jin-Cheng Hao Yue 冯倩;邢韬;王强;冯庆;李倩;毕志伟;张进成;郝跃(School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China)

机构地区：[1]School of Microelectronics,Xidian University,Xi'an 710071,China [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2012年第1期453-457,共5页中国物理B（英文版）

摘　　要：Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.

关 键 词：gallium nitride metal-oxide-semiconductor field-effect transistor atomic-layer deposi-tion aluminium oxide 

分 类 号：TN386.1[电子电信—物理电子学]