溅射时间对掺镓氧化锌透明导电薄膜特性的影响  

Effects of Sputtering Time on Structural,Optical and Electrical Properties of Gallium-Doped Zinc Oxide Films

作　　者：钟志有[1] 周金[1] 杨玲玲[1] 

机构地区：[1]中南民族大学电子信息工程学院,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2011年第3期34-37,共4页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2009CDB166);中央高校基本科研业务费专项资金项目资助(CZZ11001);中南民族大学研究生创新基金资助项目(chxxyz110107)

摘　　要：采用射频磁控溅射方法在玻璃衬底上沉积掺镓氧化锌(GZO)透明导电薄膜,通过X射线衍射仪(XRD)、分光光度计和四探针仪等测试分析,研究了溅射时间对薄膜的晶体结构、光学和电学性能的影响.结果表明:GZO薄膜的性能与溅射时间密切相关.所制备的GZO薄膜均具有良好的c轴择优取向,可见光波段的平均透过率均高于87.97%;溅射时间越长,薄膜厚度越大,相应的晶粒尺寸减小,同时衍射峰强度呈现出先增大再减小的变化趋势,当溅射时间为25 min时,GZO薄膜的衍射峰强度最大,对应的电阻率最小(1.05×10-3Ω.cm).Gallium-doped zinc oxide（GZO） thin films were deposited with various sputtering time by Radio Frequency（RF） magnetron sputtering method.The structural,optical and electrical properties of GZO films were investigated by X-ray diffraction（XRD）,spectrophotometer and four-probe meter,respectively.The results show that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the（002） direction,the average transmittance is higher than 87.97 % in the visible light range.The structural,optical and electrical properties of the GZO films are closely related to the sputtering time.The highest（002） peak intensity and the lowest resistivity（1.05×10-3Ω·cm） of GZO films are achieved when the sputtering time is 25 min.

关 键 词：掺镓氧化锌 透明导电薄膜 光电特性 

分 类 号：TM914[电气工程—电力电子与电力传动]