Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer  

作　　者：Won Mook Choi Kyung-Sik Shin Hyo Sug Lee Dukhyun Choi Kihong Kim Hyeon-Jin Shin Seon-Mi Yoon Jae-Young Choi Sang-Woo Kim 

机构地区：[1]Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea [2]School of Advanced Materials Science and Engineering, Sungkyunkwan （SKKU） Advanced Institute of Nanotechnology （SAINT）, Center for Human Interface Nanotechnology （HINT）, Sungkyunkwan University, Suwon 440-746, Republic of Korea [3]Department of Mechanical Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea

出　　处：《Nano Research》2011年第5期440-447,共8页纳米研究（英文版）

摘　　要：A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.为用在一个低温度答案过程的 graphene 缓冲区层的 SiO2/Si 底层上的 ZnO nanorods 的选择生长的有希望的策略被描述。ZnO nanorods 的高密度在一个大区域上被种，大多数 ZnO nanorods 在 graphene 上是垂直地排列得好的。而且， graphene 上的 ZnO nanorods 的选择生长被使用一个简单机械处理认识到，自从在 graphene 上形成的 ZnO nanorods 在原子水平上是机械地稳定的。这些结果被证明 ZnO-graphene 绑定有一个低 destabilization 精力的第一原则计算证实。另外，与 graphene 缓冲区层在 SiO2/Si 上种的 ZnO nanorods 比在赤裸的 SiO2/Si 上种的 ZnO nanorods 有更好光的性质，这被发现。nanostructured ZnO-graphene 材料在未来有有希望的应用灵活电子、光的设备。

关 键 词：GRAPHENE ZnO nanorod HETEROJUNCTION selective growth solution 

分 类 号：TN304.21[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]