Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs  

作　　者：Jiang Xiang-Wei Li Shu-Shen 姜向伟;李树深(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China

出　　处：《Chinese Physics B》2012年第2期490-497,共8页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China (Grant No.G2009CB929300);the National Natural Science Foundation of China (Grant Nos.60821061 and 60776061)

摘　　要：By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate （DG） metal-oxide semiconductor field-effect transistors （MOSFETs）. A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness （2.0 nm and below） by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate （DG） metal-oxide semiconductor field-effect transistors （MOSFETs）. A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness （2.0 nm and below） by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

关 键 词：quantum confinement TUNNELING metal-oxide-semiconductor field-effect transistors linear combination of bulk band 

分 类 号：TN386.1[电子电信—物理电子学] TN304.12