A high mobility C_(60) field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes  

作　　者：Zhou Jian-Lin Yu Jun-Sheng Yu Xin-Ge Cai Xin-Yang 周建林;于军胜;于欣格;蔡欣洋(State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China;Department of Electronic Engineering,College of Communication and Electronics,Chongqing University,Chongqing 400044,China)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China [2]Department of Electronic Engineering,College of Communication and Electronics,Chongqing University,Chongqing 400044,China

出　　处：《Chinese Physics B》2012年第2期498-503,共6页中国物理B（英文版）

基　　金：supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No.20100471667);the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No.2011jjA40020);the National Natural Science Foundation of China (Grant Nos.60736005 and 61021061);the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China (Grant No.GGRYJJ08-05)

摘　　要：C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.

关 键 词：organic field-effect transistors C60 Bphen passivation layer 

分 类 号：TN386[电子电信—物理电子学]