InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm  

作　　者：Li Xin-Kun Liang De-Chun Jin Peng An Qi Wei Heng Wu Jian Wang Zhan-Guo 李新坤;梁德春;金鹏;安琪;魏恒;吴剑;王占国(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Chinese Physics B》2012年第2期548-551,共4页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China (Grant No.2006CB604904);the National Natural Science Foundation of China (Grant Nos.60876086,60976057,and 60776037)

摘　　要：According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

关 键 词：quantum dot SUBMONOLAYER SELF-ASSEMBLED superluminescent diode 

分 类 号：TN312.8[电子电信—物理电子学] TN311.7