Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells  

作　　者：Qin Jun-Rui Chen Shu-Ming Liang Bin Liu Bi-Wei 秦军瑞;陈书明;梁斌;刘必慰(College of Computer,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]College of Computer,National University of Defense Technology,Changsha 410073,China

出　　处：《Chinese Physics B》2012年第2期624-628,共5页中国物理B（英文版）

基　　金：supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004);the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070)

摘　　要：Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.

关 键 词：single event upset multi-node charge collection static random access memory angulardependence 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]