A low-noise fully-differential CMOS preamplifier for neural recording applications  

作　　者：ZHANG Xu PEI WeiHua HUANG BeiJu GUAN Ning CHEN HongDa 

机构地区：[1]State Key Laboratory on Integrated Optoeleetronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Science China(Information Sciences)》2012年第2期441-452,共12页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.60776024,60877035,90820002);National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329,2007AA04Z254)

摘　　要：A fully-differential bandpass CMOS preamplifier for extracellular neural recording is presented in this paper. The capacitive-coupled and capacitive-feedback topology is adopted. We describe the main noise sources of the proposed preamplifier and discuss the methods for achieving the lowest input-referred noise. The preamplifier has a midband gain of 43 dB and a DC gain of 0. The -3 dB upper cut-off frequency of the preamplifier is 6.8 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 3.36 ~Vrms integrated from 1 Hz to 6.8 kHz for recording the local field potentials （LFPs） and the mixed neural spikes with a power dissipation of 24.75 μW from 3.3 V supply. When the passband is configured as 100 Hz-6.8 kHz for only recording spikes, the noise is measured to be 3.01μVrms. The 0.115 mm2 prototype chip is designed and fabricated in 0.35μm Nbwell CMOS （complementary metal oxide semiconductor） 2P4M process.A fully-differential bandpass CMOS preamplifier for extracellular neural recording is presented in this paper. The capacitive-coupled and capacitive-feedback topology is adopted. We describe the main noise sources of the proposed preamplifier and discuss the methods for achieving the lowest input-referred noise. The preamplifier has a midband gain of 43 dB and a DC gain of 0. The -3 dB upper cut-off frequency of the preamplifier is 6.8 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 3.36 ~Vrms integrated from 1 Hz to 6.8 kHz for recording the local field potentials （LFPs） and the mixed neural spikes with a power dissipation of 24.75 μW from 3.3 V supply. When the passband is configured as 100 Hz-6.8 kHz for only recording spikes, the noise is measured to be 3.01μVrms. The 0.115 mm2 prototype chip is designed and fabricated in 0.35μm Nbwell CMOS （complementary metal oxide semiconductor） 2P4M process.

关 键 词：neural signal amplifier low noise low power subthreshold circuit design noise efficiency factor（NEF） 

分 类 号：TN722.71[电子电信—电路与系统] TN432