Dispersion of copper oxide supported on γ-alumina and its sulfation properties  

氧化铜在γ-Al_2O_3载体表面的分布及其硫化性能(英文)

作　　者：郁青春[1] 张世超[2] 杨斌[1] 

机构地区：[1]昆明理工大学冶金与能源工程学院真空冶金国家工程实验室 [2]北京航空航天大学材料科学与工程学院

出　　处：《Transactions of Nonferrous Metals Society of China》2011年第12期2644-2648,共5页中国有色金属学报（英文版）

基　　金：Project (Jinchuan 201114) supported by the Pre-Research Foundation of Jinchuan Group Ltd., China;Project (2011148) supported by the Analysis and Testing Foundation of Kunming University of Science and Technology, China

摘　　要：CuO/γ-Al2O3 catalysts were prepared by impregnation with different CuO loadings. The dispersion of CuO supported on γ-Al2O3 support was studied using X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and temperature programmed reduction （TPR）. The dispersion threshold of CuO in γ-Al2O3 determined by X-ray quantitative analysis was 0.275 g/g, i.e., 0.275CuAl. Highly dispersed CuO or crystalline CuO would appear on the γ-Al2O3 support when CuO loading was below or more than its dispersion threshold. TPR experiments show that reduction peak temperature ranges of 0.1CuAl and pure CuO are 420-690 °C and 290-380 °C, respectively. 0.1CuAl is not easily reduced due to interaction between CuO and γ-Al2O3. 0.5CuAl shows a two-step reduction range during 210-300 °C and 410-730 °C, which confirms the existence of highly dispersed CuO and crystalline CuO. The sulfation experiments show the optimal CuO loading amount is far below its dispersion threshold, and copper oxide supported on γ-Al2O3 is in the form of submonolayer.采用浸渍方法制备不同氧化铜含量的CuO/γ-Al2O3催化剂。使用XRD、SEM和程序控制升温还原(TPR)方法研究γ-Al2O3载体表面氧化铜的分布情况。用X射线定量分析方法得到氧化铜在γ-Al2O3中的分散阈值为0.275g/g,即0.275CuAl。当氧化铜负载量小于或大于其分散阈值时,高度分散或结晶状氧化铜将会出现在γ-Al2O3载体表面。TPR实验表明0.1CuAl和纯CuO还原温度范围分别为420-690°C和290-380°C。氧化铜与载体之间的相互作用导致0.1CuAl不易被还原。0.5CuAl呈现2个分步还原温度范围,分别为210-300°C和410-730°C,证实了γ-Al2O3载体表面高度分散和结晶状分布的氧化铜。硫化实验表明,最佳氧化铜负载量小于其分散阈值,氧化铜以亚单层形式分布在γ-Al2O3载体表面。

关 键 词：copper oxide DISPERSION SUBMONOLAYER 

分 类 号：O643.36[理学—物理化学]