Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes  

作　　者：Jiang Huaping Zhang Bo Liu Chuang Chen Wanjun Rao zugang Dong Bin 蒋华平;张波;刘闯;陈万军;饶祖刚;董彬(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054,China;Tianjin Zhonghuan Semiconductor Co.Ltd.,Tianjin 300384,China)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054,China [2]Tianjin Zhonghuan Semiconductor Co.Ltd.,Tianjin 300384,China

出　　处：《Journal of Semiconductors》2012年第2期41-44,共4页半导体学报（英文版）

基　　金：supported by the Major Specialized Program of National Science and Technology,China(No.2011ZX02706-003)

摘　　要：The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.

关 键 词：non-punch-through IGBT anode injection efficiency reduction breakdown voltage 

分 类 号：TN322.8[电子电信—物理电子学]