Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell  

作　　者：Cui Min Chen Nuofu Yang Xiaoli Zhang Han 崔敏;陈诺夫;杨晓丽;张汉(School of Applied Physics and Mathematics,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;New and Renewable Energy of Beijing Key Laboratory,North China Electric Power University,Beijing 102206,China)

机构地区：[1]School of Applied Physics and Mathematics,Beijing University of Technology,Beijing 100124,China [2]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [3]New and Renewable Energy of Beijing Key Laboratory,North China Electric Power University,Beijing 102206,China

出　　处：《Journal of Semiconductors》2012年第2期54-57,共4页半导体学报（英文版）

基　　金：supported by Doctoral Initial Fund of Be ijing University of Technology,China(No.X0006015201101);the National Natural Foundation of China(No.10804005)

摘　　要：GalnP/GaAs/Ge tandem solar cells were fabricated by a MOCVD technique.The photoelectric properties of the solar cells were characterized by a current-voltage test method.The dependence of the solar cell’s characteristics on temperature were investigated from 30 to 170°C at intervals of 20°C.Test results indicated that with increasing temperature,JSC of the cell increased slightly with a temperature coefficient of 9.8（μA/cm2）/°C.Voc reduced sharply with a coefficient of-5.6 mV/°C.FF was reduced with a temperature coefficient of—0.00063/℃. Furthermore,the conversion efficiency decreased linearly with increasing temperature which decreased from 28% at 30℃to 22.1%at 130°C.Also,detailed theoretical analyses for temperature characteristics of the solar cell were given.GalnP/GaAs/Ge tandem solar cells were fabricated by a MOCVD technique.The photoelectric properties of the solar cells were characterized by a current-voltage test method.The dependence of the solar cell’s characteristics on temperature were investigated from 30 to 170°C at intervals of 20°C.Test results indicated that with increasing temperature,J;of the cell increased slightly with a temperature coefficient of 9.8（μA/cm;）/°C.V;reduced sharply with a coefficient of-5.6 mV/°C.FF was reduced with a temperature coefficient of—0.00063/℃. Furthermore,the conversion efficiency decreased linearly with increasing temperature which decreased from 28% at 30℃to 22.1%at 130°C.Also,detailed theoretical analyses for temperature characteristics of the solar cell were given.

关 键 词：GaInP/GaAs/Ge tandem solar cells temperature dependence solar energy 

分 类 号：TM914.4[电气工程—电力电子与电力传动]