反对称n-AlGaN层对GaN基双蓝光波长发光二极管性能的影响  

Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes

作　　者：严启荣[1] 章勇[1] 闫其昂[1] 石培培[1] 郑树文[1] 牛巧利[1] 李述体[1] 范广涵[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广州510631

出　　处：《物理学报》2012年第3期330-337,共8页Acta Physica Sinica

基　　金：教育部留学回国人员科研启动基金(批准号:20091001);广东省教育部产学研结合项目(批准号:2009B090300338);国家自然科学基金(批准号:8251063101000-007);华南师范大学学生课外科研重点课题项目(10GDKC07)资助的课题~~

摘　　要：采用数值分析方法对在InGaN/GaN混合多量子阱活性层和n-GaN之间引入n-A1GaN层的GaN基双蓝光波长发光二极管进行模拟分析.结果发现,与传统的具有p-A1GaN电子阻挡层的双蓝光波长发光二极管相比,这种反对称n-A1GaN层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性及减少电子溢出,实现电子空穴在各个量子阱中的平衡辐射,从而减弱了双蓝光波长发光二极管的效率衰减.此外,通过改变A1组分可以提高双蓝光波长发光二极管发射光谱的稳定性:当A1组分为0.16时,双蓝光波长发光二极管的光谱在小电流下比较稳定,而A1组分为0.12时,光谱在大电流下比较稳定.The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode（LED） is investigated numerically.The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer（EBL）,the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells,and further reduce the efficiency drop of dual-blue wavelength LED at high current.In addition,the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition.It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16,while the emission spectrum is more stable at high current with an Al composition of 0.12.

关 键 词：n-AlGaN p-AlGaN 混合多量子阱 双蓝光波长 

分 类 号：TN312.8[电子电信—物理电子学]