MOSFET的驱动保护电路的设计与应用  

Design and application of power MOSFET drive and protection circuit

作　　者：郭毅军[1] 苏小维[1] 李章勇[1] 陈丽[1] 

机构地区：[1]重庆邮电大学自动化学院,重庆400065

出　　处：《电子设计工程》2012年第3期169-171,174,共4页Electronic Design Engineering

摘　　要：率场效应晶体管由于具有诸多优点而得到广泛的应用;但它承受短时过载的能力较弱,使其应用受到一定的限制。分析了MOSFET器件驱动与保护电路的设计要求;计算了MOSFET驱动器的功耗及MOSFET驱动器与MOS-FET的匹配;设计了基于IR2130驱动模块的MOSFET驱动保护电路。该电路具有结构简单,实用性强,响应速度快等特点。在驱动无刷直流电机的应用中证明,该电路驱动能力及保护功能效果良好。Power MOSFET has being used broadly because of its advantages. But the ability of bearing short-time overburden is weak, which constrains its applications. The authors analyze the design request of power MOSFET drive and protection circuit; Calculate the power of MOSFET driver; On the basis of analysis the power MOSFET drive and protection circuit based on IR2130 was designed. The circuit was characterized by simple structure, well application and quick response. Its practical application to drive BLDC proved that the drive capability and protecting function achieves well results.

关 键 词：功率场效应晶体管 功耗和匹配 驱动电路 保护电路 

分 类 号：TN6[电子电信—电路与系统]