氧化层厚度对NPN双极管辐射损伤的影响  

Effect of oxides thickness on radiation damage to NPN bipolar transistors

作　　者：席善斌[1,2] 陆妩[1] 王志宽[3] 任迪远[1] 周东[1,2] 文林[1] 孙静[1] 

机构地区：[1]新疆电子信息材料与器件重点实验室,中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院研究生院,北京100049 [3]模拟集成电路国家重点实验室,重庆400060

出　　处：《核技术》2012年第2期104-108,共5页Nuclear Techniques

基　　金：国家自然科学基金项目(No.10975182)资助

摘　　要：研究了不同氧化层厚度的两种国产NPN双极晶体管在高低剂量率下的辐射效应和退火特性。结果显示,随总剂量的增加,晶体管基极电流增大,电流增益下降,且薄氧化层的晶体管比常规厚氧化层的晶体管退化更严重。另外,两种NPN晶体管均表现出明显的低剂量率损伤增强效应。本文对各种实验现象的损伤机理进行了分析。Radiation damage, caused by high or low dose rate irradiation, to NPN transistors of different oxide thicknesses is investigated experimentally. The results show that base current of the transistors increased with total dose, but the current gain decreased with increasing total dose. The NPN transistors of thin oxides degraded more than those of ordinary oxide thickness. However, both types of the NPN transistors exhibited the enhanced low dose rate sensitivity （ELDRS）. Mechanisms of the effects are discussed.

关 键 词：NPN双极晶体管 60Coγ辐照 氧化层厚度 剂量率效应 

分 类 号：TN322.8[电子电信—物理电子学]