阴极还原和酸处理对多孔硅稳定性和发光特性的改善  

Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon

作　　者：元美玲[1] 唐鹿[1] 吴真琦[1] 汪庆年[2] 

机构地区：[1]南昌大学物理系,江西南昌330047 [2]南昌大学信息工程学院,江西南昌330029

出　　处：《发光学报》2012年第2期146-149,共4页Chinese Journal of Luminescence

基　　金：江西省自然科学基金项目部分(2007GZW2354)

摘　　要：采用两种简单的多孔硅后处理方法,即阴极还原和酸处理来提高多孔硅的发光特性。结果表明,对多孔硅进行阴极还原处理,能明显改善多孔硅的稳定性;对多孔硅进行酸处理,能有效提高多孔硅的发光强度。结合阴极还原和酸处理两实验技术的特点,对所制备的多孔硅先进行阴极还原处理,再进行酸处理,结果表明该方法能较好地提高多孔硅的发光效率和发光稳定性。Two simple methods,including acid treatment and cathode reduction treatment,are employed to treat porous silicon material for improving the luminescence properties of porous silicon material and obtaining good results.The results show that cathode reduction can significantly improve the stability of porous silicon and acid treatment can effectively improve the luminous intensity.When both of these two methods are adopted,cathode reduction prior to acid treatment can obtain a better result than opposite process.

关 键 词：多孔硅 酸处理 阴极还原处理 

分 类 号：O433.1[机械工程—光学工程]