ZrO_2掺杂对Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷介电性能的影响  

Effect of ZrO_2 Doping on the Microwave Dielectric Properties of Ba(Zn_(1/3)Ta_(2/3))O_3 Ceramics

作　　者：陈黎[1] 吴孟强[1] 龙明珠[1] 肖勇[1] 姜锐[1] 黄明冀[1] 张树人[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2012年第1期136-139,共4页Piezoelectrics & Acoustooptics

基　　金：四川省青年基金资助项目(JS0303001)

摘　　要：采用固相反应烧结法制备了ZrO2掺杂的Ba(Zn1/3Ta2/3)O3微波介质陶瓷,研究了陶瓷的烧结特性和介电性能。结果表明,ZrO2掺杂能有效降低Ba(Zn1/3Ta2/3)O3陶瓷的烧结温度,改善陶瓷的微波介电性能。当x(ZrO2)=4%时,Ba(Zn1/3Ta2/3)O3陶瓷致密化烧结温度由纯相时的1 600℃降至1 300℃,同时陶瓷材料的微波介电性能达到最佳值,即介电常数εr=34.79,品质因数与频率的乘积Q×f=148 000(8GHz),谐振频率温度系数τf=0.3×10-6/℃。The ZrO2 doped Ba（Zn1/3Ta2/3）O3（BZT） microwave dielectric ceramics were prepared using the solid-phase reaction sintering.The effect of ZrO2 additives on the sintering temperature,microstructures and dielectric properties of BZT ceramics was studied in detail in this paper.It indicates that ZrO2 addition can lower the sintering temperature of the ceramics and improve the microwave dielectric properties.When 4% ZrO2 added,the sintering temperature decreases from 1 600 ℃ to 1 300 ℃,In this paper,the best sample behaves excellent properties of εr=34.79,Q×f=148 000（8 GHz）,and τf =0.3×10-6/℃.

关 键 词：ZrO2掺杂 微波介质陶瓷 烧结温度 Ba(Zn1/3Ta2/3)O3 

分 类 号：TM277[一般工业技术—材料科学与工程]