MIM隧道发光二极管的电子输运研究  

THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE

作　　者：俞建华[1] 孙承休[1] 王启明[2] 

机构地区：[1]东南大学电子工程系,南京210096 [2]中国科学院半导体所集成光电子国家重点实验室,北京100083

出　　处：《电子科学学刊》2000年第1期144-150,共7页

基　　金：国家自然科学基金(批准号 69576006);集成光电子国家重点实验室的资助

摘　　要：本文报道了MIM隧道二极管的发光和负阻现象,用梯形势垒计算了电流-电压特性。结果显示,由于SPP波对电子的阻挡和束缚作用引起的势垒平均宽度的增加所导致的负阻现象与实验结果相符合。This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve. By building the trapezoid potential barrier model and calculating the numerical solution of I-V characteristic curve with computer, it is found that the increment of potential barrier average width is agree with the experiment well. This increment of potential barrier average width is caused by the SPP's impeding and trapping effect upon tunneling electrons.

关 键 词：MIM隧道 电子输运 发光二极管 

分 类 号：TN383[电子电信—物理电子学]