活性屏离子渗氮技术中偏压电源伏安特性  

Voltage-current characteristic of bias in active screen plasma nitriding

作　　者：蓝跃龙[1] 王宇[1] 郑少梅[1] 赵程[1] 

机构地区：[1]青岛科技大学机电工程学院表面技术研究所,山东青岛266061

出　　处：《材料热处理学报》2012年第2期154-157,共4页Transactions of Materials and Heat Treatment

基　　金：山东省自然科学基金项目(ZR2010EM018)

摘　　要：研究了活性屏离子渗氮技术中,气体成分、主电压、温度、压强以及笼子尺寸对偏压伏安特性曲线的影响,并用气体放电理论对曲线做出了解释。实验结果表明,在H2或N2/H2气氛中,偏压的伏安特性曲线呈线性增长;而在纯N2气氛中,偏压的伏安特性曲线则呈非线性,并在250 V时出现拐点。研究还发现,在偏压一定的情况下,偏流会随着主电压和气压的升高而增大,随着温度的升高而减小,而笼子尺寸对偏压的伏安特性曲线的影响比较小。The effects of gas composition,main voltage,pressure,temperature and active screen size on the voltage-current characteristics of bias in active screen plasma nitriding was studied.The voltage-current characteristics are explained by glow discharge theory.The results show that the voltage-current characteristics of the bias is linear growth in H2 or N2/H2 mixture gases.But in N2,the curve is non-linear and a knee point of the curve appears at 250V.It is also found that the current is increased with increase of the main voltage and pressure,but decreased with increase of the temperature under constant bias.No significant influence of the active screen size on the curve is observed.

关 键 词：活性屏离子渗氮 主电压 偏压伏安特性 

分 类 号：TG156.82[金属学及工艺—热处理]