BaTiO_3薄膜的Sol-gel法制备及对其介电特性的研究  

Preparation of Barium Titanate Thin Film by the Sol-gel Technique and the Study on Dielectric Properties

作　　者：沈良[1] 宋世庚[1] 贾锐[1] 陶明德[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《新疆大学学报（自然科学版）》2000年第1期57-60,共4页Journal of Xinjiang University(Natural Science Edition)

摘　　要：以钛酸四丁酯和乙酸钡为主要原料，以乙二醇独甲醚为溶剂，采用溶胶凝胶法在(100)低阻硅片上制备了BaTiO-3薄膜电容，用XRD分析了该薄膜的结构，发现薄膜在硅片上取向生长，同时又对薄膜的介电性质进行研究，结果表明。BaTiO-3 thin film were prepared on Si(100) substract by solgel technique using ethylene glycol monomethyl ether as solevnt,barium acetate and titanium tetrabutoxide as precursor.Xray diffraction were used to study structure,it shows that the polycrystalline BaTiO-3 thin film with some orientation were obtained.Their dielectric properties were measured,and the effect of the increasing crystalline temperature on the property were observed,that is increasing the capatiancy of the thin film.

关 键 词：溶胶-凝胶法 介电性质 钛酸钡薄膜 介电常数 

分 类 号：O484.1[理学—固体物理] TQ174.756[理学—物理]