制备条件对ATO包覆氧化硅导电粉电性能的影响  

Influence of Synthesis Conditions on Conductivity of ATO-coated Silicon Dioxide

作　　者：颜东亮[1,2] 郭子龙[1] 陈林[3] 吴建青[2] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,桂林541004 [2]华南理工大学材料科学与工程学院,广州510640 [3]萍乡高等专科学校化学工程系,萍乡337055

出　　处：《材料导报》2012年第4期9-11,共3页Materials Reports

基　　金：广东省自然科学基金(05006564)

摘　　要：采用非均匀成核法制备了ATO包覆氧化硅导电粉体。正交实验的结果表明,各因素对ATO包覆纤维效果的影响从大到小依次是包覆悬过程中氧化硅的用量、包覆层溶液离子浓度、反应过程的pH值、包覆时反应温度及包覆离子溶液加入速度。通过正交实验所确定ATO包覆氧化硅粉体的合理工艺参数:包覆悬过程中氧化硅的用量保持在0.4g/mL、包覆过程的pH值控制为2.0、包覆层离子浓度为0.6mol/L、包覆离子溶液加入速度为0.5mL/min、反应温度为50℃。通过正交实验所确定的合成参数所得的复合导电粉体的电阻率只有108.1Ω.cm。Conductive fiber was prepared by coating antimony-doped tin oxide（ATO） on silicon dioxide powder using heterogeneous nuclearation method. The orthogonal experiment results show that the sequence of the factors to affect the ATO coating quality of silicon dioxide powder are solid SiO2 content, coating ion concentration, pH value of coating process, reaction temperature and solution feeding rate. According to the orthogonal experiment, the reasona- ble processing parameters to prepare ATO-coated silicon dioxide and ATO-coated silicon dioxide fiber are as follows.. SiO2 content is 0. 4g/mL, coating ion concentration is 0. 6mol/L, pH value is about 2.0, reaction temperature is 50℃ and solution feeding rate is 0. 5mL/min. The lowest resistivity of coated powder is only 108. 1Ω · cm prepared by the optimal processing parameters.

关 键 词：非均匀成核法 正交实验 制备条件 

分 类 号：TB34[一般工业技术—材料科学与工程]