石墨烯制备与带隙调控的研究进展  

Recent Progress in Preparation and Band-gap Modulation of Graphene

作　　者：焦小亮 张悦炜 何潺 徐剑峰 杨靖霞 洪樟连[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江大学材料科学与工程学系,杭州310027

出　　处：《材料导报》2012年第5期12-17,共6页Materials Reports

基　　金：国家自然科学基金(51072180);硅材料国家重点实验室开放基金(SKL2009-14)

摘　　要：石墨烯的独特结构和性能使其在纳米电子、半导体器件等领域中的研究成为热点课题。综述了石墨烯的结构特性及制备方法,重点评述了石墨烯带隙调控的方法及其原理,概括了各种方法可实现的带隙调节范围及研究现状,并介绍了半导体石墨烯在纳米电子器件上的应用前景,提出今后值得关注的研究方向。Graphene, with its unique structure and properties, has become a hot topic in the research of nanoelectronics, semiconductor devices and so on. The properties and preparations of graphene are summarized, and the focus is placed on the manipulation of the bandgap of grephene. Different manipulating methods and their corresponding principles are specified, and the research status of various methods, especially the tunable range of the graphene bandgap are summarized. The application prospects of graphene with tunable gap which related to nano-electronic device are introduced. Finally, trends for future research and development are proposed.

关 键 词：石墨烯 半导体 禁带宽度 带隙调控 纳米电子器件 

分 类 号：TN4[电子电信—微电子学与固体电子学]