超导MgB_2掺杂及薄膜制备研究进展  

Research Progress of Doping and Thin Film Fabrication Methods of MgB_2 Superconductor

作　　者：王洪伟[1] 张松[1] 崔瑞瑞[1] 李绪诚[1] 张荣芬[1] 邓朝勇[1] 

机构地区：[1]贵州大学理学院贵州省微纳电子与软件技术重点实验室,贵阳550025

出　　处：《材料导报》2012年第5期28-35,共8页Materials Reports

基　　金：国家自然科学基金(51002035);贵州省科技创新人才团队建设专项资金(2010-4005);贵州省自然科学基金(黔科合J字[2008]-2213;[2010]-2134);贵州大学研究生创新基金(2011002)

摘　　要：综述了MgB2超导体近期的研究成果,介绍了MgB2的电子结构和超导性质以及化学掺杂对MgB2超导性质的影响,认为通过掺杂可以提高MgB2超导材料在高场下的Jc,少量的SiC掺杂可以得到目前最优异的Jc。讨论了制备MgB2超导薄膜的各种方法,发现HPCVD法制备MgB2超导薄膜有巨大的发展空间,并展望了MgB2超导体的应用前景。The research status of MgB2 superconductor is summarized. The electronic structures and supercon- ducting properties of MgB2 and the doping effect on the superconducting properties of MgB2 are introduced. The doping can improve the Jc of the superconducting materials of MgB2 in high off the pitch, and a small amount of SiC do ping can get the most excellent Jc. In addition, the methods of MgB2 thin film fabrication are discussed and analyzed, and the HPCVD method have vast development space, and the application prospect of MgB2 superconductor is proposed.

关 键 词：MGB2 电子结构 超导性质 

分 类 号：TM26[一般工业技术—材料科学与工程]