中子辐照6H-SiC晶体的退火特性及缺陷观测  

Annealing Behavior and Observation for Defects in Neutron-Irradiated 6H-SiC Crystals

作　　者：阮永丰[1] 黄丽[1] 王鹏飞[1] 马鹏飞[1] 贾敏[1] 祝威[1] 

机构地区：[1]天津大学理学院,天津300072

出　　处：《硅酸盐学报》2012年第3期436-442,共7页Journal of The Chinese Ceramic Society

基　　金：中航集团(C20070716)资助项目

摘　　要：利用X射线衍射(XRD)研究中子辐照6H-SiC晶体的退火特性,发现辐照后晶体的XRD峰的半高宽(full width at half maximum,FWHM)增大,之后又随退火温度的升高,在700～1 230℃范围内呈线性规律的回复。以此规律为依据,可发展一种适合测量高温和复杂温度场温度的测温方法。采用添加了K2CO3的KOH为腐蚀剂,对辐照前、辐照后及辐照后退火的掺氮6H-SiC单晶进行位错腐蚀观察,发现经中子辐照的晶体中位错面积比随退火温度的变化趋势与FWHM随退火温度的变化趋势基本一致,由此认为经中子辐照所产生的位错可能是导致XRD峰的FWHM变化的一个重要因素。The annealing characteristic of neutron-irradiated 6H-SiC crystals was analyzed by X-ray diffraction（XRD）.It was found that the full width at half maximum（FWHM） of the XRD peaks of the neutron-irradiated samples increased and recovered with in-creasing of the annealing temperature,showing a linear recovery law in the range of 700–1 230 ℃.Based on the law,a novel tem-perature measurement technique for the determination of high temperature and complicated temperature field was proposed.More-over,the dislocation defects for the unirradiated,irradiated and post-irradiation annealed samples were investigated by using KOH added K2CO3 as a chemical etchant.The change trends of dislocation area ratio in the irradiated sample with the annealing tempera-ture almost agreed with that of FWHM,indicating that the dislocations induced by neutron irradiation could be one of important fac-tors for the changes of FWHM due to the thermal annealing treatment.

关 键 词：碳化硅晶体 中子辐照 退火 位错 

分 类 号：O774[理学—晶体学]